SISA10DN-T1-GE3

SISA10DN-T1-GE3

$0.95


Производитель :
Описание :
MOSFET N-CH 30V 30A 1212-8
Количество :
34736

Доступность в настоящее время

На складе: 34736 Готово к отгрузке

1+: $ 0.95
10+: $ 0.93
100+: $ 0.91
500+: $ 0.89
1000+: $ 0.88
ManufacturerVishay Siliconix
Series
PackagingCut Tape (CT)xa0
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On,Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.7 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs51nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds2425pF @ 15V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 39W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

New and Original electronic components SISA10DN-T1-GE3 from Vishay Siliconix Huge inventory, fast shipment, Tenco electronics website accept order online、BOM list quotation, and accept various payment term. Right now register as our member,you can get lots of discounts. For any inquiry, welcome to send email to us, or leave a message.

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