FCP190N60E

FCP190N60E

$1.93


Производитель :
Описание :
MOSFET N-CH 600V TO220-3
Количество :
63918

Доступность в настоящее время

На складе: 63918 Готово к отгрузке

1+: $ 1.93
10+: $ 1.89
100+: $ 1.85
500+: $ 1.82
1000+: $ 1.78
ManufacturerON Semiconductor
Series
PackagingTubexa0
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C20.6A (Tc)
Drive Voltage (Max Rds On,Min Rds On)10V
Rds On (Max) @ Id, Vgs190 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs82nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3175pF @ 25V
FET Feature-
Power Dissipation (Max)208W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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